| PART |
Description |
Maker |
| 2N5883 2N5883-D |
Power 25A 60V Discrete PNP
Complementary Silicon High-Power Transistors
|
ON Semiconductor
|
| OC28 OC22 OC23 OC30 OC25 OC19 OC36 AUY29IV AUY24 A |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 24V V(BR)CEO | 1A I(C) | TO-3
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1.4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 15A I(C) | TO-41
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-41
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-41 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 8A条一（c）|1
|
Vicor, Corp.
Marktech Optoelectronics
|
| DXT2012P5 DXT2012P5-13 DXT2012P5-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
60V PNP MEDIUM POWER TRANSISTOR PowerDI?5
|
Diodes Incorporated
|
| RFD16N06LESM RFD16N06LESM9A |
Discrete Commercial N-Channel Power MOSFET, 60V, 16A, 0.047 Ohms @ VGS = 4.5V, TO-252/DPAK Package
16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| MJ15002 MJ15001 MJ15001-D |
Power 15A 140V Discrete PNP
Power 15A 140V Discrete NPN
Complementary Silicon Power Transistors
|
ON Semiconductor
|
| 2SA1615-Z 2SA1615-ZK 2SA1615L 2SA1615-ZL 2SA1615 |
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-252AA
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 10A I(C) | TO-251AA
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
NEC[NEC]
NEC Corp.
|
| 2N4919G |
Bipolar Power C77 PNP 3A 60V; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-225AA
|
ON Semiconductor
|
| 2N4399 |
PNP Silicon High-Power Transistor(60V（集电极-发射极）硅PNP大功率晶体管) 30 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-204AA
|
ON Semiconductor
|
| ZX5T951Z ZX5T951ZTA |
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 4.3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
|
| 2N1080 2N5409 2N2202 2N4350 2N4242 2N3142 2N3141 2 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 5A I(C) | TO-111
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 65V V(BR)CEO | 2A I(C) | STR-10
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 5A I(C) | TO-36
Open-Drain SOT µP Reset Circuit
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | CAN
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 3A I(C) | TO-53
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 5A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | TO-210AC
晶体管|晶体管|进步党| 60V的五（巴西）总裁| 60mA的一（c）|1
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 350MA I(C) | TO-5 晶体管|晶体管|叩| 40V的五（巴西）总裁| 350mA的一（c）|
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 10A I(C) | STR-1/4 晶体管|晶体管|叩| 50V五（巴西）总裁| 10A条一（c）|个STR - 1 / 4
Open-Drain SOT µP Reset Circuit
|
Winbond Electronics, Corp.
|
| ZXTP2012ASTZ |
60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN E-LINE 3500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Zetex Semiconductor PLC
|
| 2SB834 2SB834O 2SB834Y |
POWER TRANSISTORS(3.0A,60V,30W)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
MOSPEC[Mospec Semiconductor]
MOSPEC SEMICONDUCTOR CORP.
Mospec Semiconductor, Corp.
|
